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| S T C 2200 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.3A R DS (ON) S uper high dense cell design for low R DS (ON). 85 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. S OT-323 package. D S OT-323 D S G G S AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ Tc=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 10 2.3 8 1 1.0 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 125 C /W 1 S T C 2200 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5V, ID =2A VGS = 2.5V, ID= 1A VDS = 5V, VGS = 4.5V VDS = 5V, ID =2.3A Min Typ C Max Unit 20 1 100 0.5 0.8 60 85 6 7 210 75 46 1.5 85 110 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGS = 4.5V, R GE N = 6 ohm 13.2 9.1 27.3 15.9 4.2 ns ns ns ns nC nC nC VDS =10V, ID = 2A, VGS =4.5V 0.88 1.53 2 S T C 2200 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1A Min Typ Max Unit 0.83 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 V G S =10V 16 V G S =4V 15 25 C 12 -55 C V G S =4.5V ID, Drain C urrent(A) ID, Drain C urrent (A) V G S =3V 12 T j=125 C 9 6 8 4 0 V G S =2V 3 0 0.0 0 0.5 1 1.5 2 2.5 3 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 500 400 300 200 C os s 100 C rs s 0 0 5 10 15 20 25 30 0 C is s F igure 2. Trans fer C haracteris tics V G S =4.5V ID=2A R DS (ON), On-R es is tance Normalized 1.8 1.4 1.0 0.6 0.2 C , C apacitance (pF ) -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T C 2200 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 0 3 6 9 V DS =5V 12 15 Is , S ource-drain current (A) 10 10 1 0 0.4 0.8 1.2 1.6 T J =25 C 2.0 2.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 VDS =4.5V ID=2A 10 RD ON S( )L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T C 2200 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T C 2200 S O T -323 A L G J B C I H E D (TYP .) 1.8 1.8 1.15 0.25 0 2.2 2.4 1.35 0.4 0.10 ---1.30 REF. 1.00 0.25 ------ 0.709 0.709 0.453 0.098 0 ---0.512 REF. 0.315 0.039 ---0.256 0.866 0.945 0.531 0.157 0.039 ---0.394 0.098 ------- F G ---0.80 0.10 ---0.65 I J L 6 S T C 2200 SOT-323 Tape and Reel Data SOT-323 Carrier Tape UNIT:P PACKAGE SOT-323 A0 2.40 O0.10 B0 2.40 O0.10 K0 D0 D1 i1.50 +0.10 E 8.00 +0.30 -0.10 E1 1.75 O0.10 E2 3.50 O0.05 P0 4.00 O0.10 P1 4.00 O0.10 P2 2.00 O0.05 T 0.254 O0.02 i1.00 1.19 O0.10 +0.25 SOT-323 Reel UNIT:P TAPE SIZE 8P REEL SIZE i178 M i178 O1 N i60 O1 W 9.00 O0.5 W1 12.00 O0.5 H i13.5 O0.5 K 10.5 S G R 5.00 V 18.00 2.00 i10.0 O0.5 7 |
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